SI9934BDY-T1-GE3
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SI9934BDY-T1-GE3 datasheet
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МаркировкаSI9934BDY-T1-GE3
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ПроизводительVishay Intertechnology
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ОписаниеVishay Intertechnology SI9934BDY-T1-GE3 Current - Continuous Drain (id) @ 25?° C: 4.8A Drain Source Voltage Vds: -12V Drain To Source Voltage (vdss): 12V Fet Feature: Logic Level Gate Fet Type: 2 P-Channel (Dual) Gate Charge (qg) @ Vgs: 20nC @ 4.5V ID_COMPONENTS: 1715475 Module Configuration: Dual Mounting Type: Surface Mount On Resistance Rds(on): 28mohm Package / Case: 8-SOIC (0.154", 3.90mm Width) Power: RoHS Compliant Power - Max: 1.1W Rds On (max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V Rds(on) Test Voltage Vgs: -4.5V Series: TrenchFET?® Threshold Voltage Vgs Typ: -1.4V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 1.4V @ 250?µA Other Names: SI9934BDY-T1-GE3TR
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Количество страниц6 шт.
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Форматы файлаHTML, PDF
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